| Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7 |
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| 引用本文： | 侯志灵,曹茂盛,袁杰,宋维力.Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7[J].中国物理 B,2010,19(1):17702-017702. |
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| 作者姓名： | 侯志灵 曹茂盛 袁杰 宋维力 |
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| 作者单位： | School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;School of Science, Beijing University of Chemical Technology, Beijing 100029, China;School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;School of Information Engineering, Central University for Nationalities, Beijing 100081, China;School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No. 50872159) and the
National Defense Pre-research Foundation of China (Grant Nos.
513180303 and A2220061080). |
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| 摘 要： | This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
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| 关 键 词： | γ-Y2Si2O7 dielectric properties structural relaxation polarization low dielectric loss |
| 收稿时间： | 2008-12-31 |
| 修稿时间： | 6/5/2009 12:00:00 AM |
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