首页 | 本学科首页   官方微博 | 高级检索  
     检索      

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2multilayers
作者姓名:黄林傲  王梅雨  王鹏  袁源  刘若柏  刘天宇  卢羽  陈家瑞  魏陆军  张维  游彪  徐庆宇  杜军
作者单位:1.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;2.College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;3.School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China;4.School of Physics, Southeast University, Nanjing 211189, China;5.Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
基金项目:supported by the National Natural Science Foundation of China(Grant Nos.51971109,51771053,52001169,and 11874199);the National Key Research and Development Program of China(Grant No.2016YFA0300803);the Fundamental Research Funds for the Central University,China(Grant No.2242020k30039);the open research fund of Key Laboratory of MEMS of Ministry of Education,Southeast University。
摘    要:The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/Ni(4 nm)/Pt(1 nm)]2multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.

关 键 词:perpendicular  magnetic  anisotropy  perpendicular  exchange  bias  epitaxial  growth  random  field  model
收稿时间:2021-08-24

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers
Lin-Ao Huang,Mei-Yu Wang,Peng Wang,Yuan Yuan,Ruo-Bai Liu,Tian-Yu Liu,Yu Lu,Jia-Rui Chen,Lu-Jun Wei,Wei Zhang,Biao You,Qing-Yu Xu,Jun Du.Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2multilayers[J].Chinese Physics B,2022,31(2):27506-027506.
Authors:Lin-Ao Huang  Mei-Yu Wang  Peng Wang  Yuan Yuan  Ruo-Bai Liu  Tian-Yu Liu  Yu Lu  Jia-Rui Chen  Lu-Jun Wei  Wei Zhang  Biao You  Qing-Yu Xu  Jun Du
Institution:1.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;2.College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;3.School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China;4.School of Physics, Southeast University, Nanjing 211189, China;5.Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Abstract:The realization of perpendicular magnetization and perpendicular exchange bias (PEB) in magnetic multilayers is important for the spintronic applications. NiO(t)/Ni(4 nm)/Pt(1 nm)]2 multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO3 (001) substrates. Perpendicular magnetization can be achieved when t < 25 nm. Perpendicular magnetization originates from strong perpendicular magnetic anisotropy (PMA), mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers. The PMA energy constant decreases monotonically with increasing t, due to the weakening of Ni (001) orientation and a little degradation of the Ni-Pt interface. Furthermore, significant PEB can be observed though NiO layer has spin compensated (001) crystalline plane. The PEB field increases monotonically with increasing t, which is considered to result from the thickness dependent anisotropy of the NiO layer.
Keywords:perpendicular magnetic anisotropy  perpendicular exchange bias  epitaxial growth  random field model  
本文献已被 维普 等数据库收录!
点击此处可从《中国物理 B》浏览原始摘要信息
点击此处可从《中国物理 B》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号