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The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates
Authors:Michael Niehle  Jean-Baptiste Rodriguez  Laurent Cerutti  Eric Tourni  Achim Trampert
Institution:Michael Niehle,Jean-Baptiste Rodriguez,Laurent Cerutti,Eric Tournié,Achim Trampert
Abstract:
Keywords:epitaxial growth  extended defects  semiconductor heterostructures  step bunching
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