|
|||||
|
|
Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor |
|
| Authors: | Lü Li Sun Jian-Dong Roger A Lewis Sun Yun-Fei Wu Dong-Min Cai Yong Qin Hua |
| Institution: | a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; b Graduate University of Chinese Academy of Sciences, Beijing 100049, China; c Institute for Superconducting and Electronic Materials and School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia; d i-Lab, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| Abstract: | In the terahertz(THz) regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor. |
| Keywords: | terahertz detector terahertz antenna near-field probe high electron mobility transistor |
| 本文献已被 CNKI 等数据库收录！ | |
| 点击此处可从《中国物理 B》浏览原始摘要信息 | |
| 点击此处可从《中国物理 B》下载免费的PDF全文 | |