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Separated Al_xIn₁₋_xN quantum dots grown by plasma-reactive co-sputtering

Authors:	S.Y. Huang S.Y. Xu J.D. Long Z. Sun X.Z. Wang Y.W. Chen T. Chen C. Ni Z.J. Zhang L.L. Wang X.D. Li P.S. Guo W.X. Que

Affiliation:	^aPhysics Department, East China Normal University, Shanghai 200062, PR China;^bPlasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616

Abstract:	Separated Al_xIn₁₋_xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of Al_xIn₁₋_xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the Al_xIn₁₋_xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

Keywords:	Separated Quantum dots ICP-assisted magnetron
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