Separated AlxIn1−xN quantum dots grown by plasma-reactive co-sputtering |
| |
Authors: | SY Huang SY Xu JD Long Z Sun XZ Wang YW Chen T Chen C Ni ZJ Zhang LL Wang XD Li PS Guo WX Que |
| |
Institution: | aPhysics Department, East China Normal University, Shanghai 200062, PR China;bPlasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 |
| |
Abstract: | Separated AlxIn1−xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1−xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1−xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs. |
| |
Keywords: | Separated Quantum dots ICP-assisted magnetron |
本文献已被 ScienceDirect 等数据库收录! |