A new technique to measure the phase characteristics of laser mirrors based on semiconductor heterostructures |
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| Authors: | A A Kovalyov O P Pchelyakov V V Preobrazhenskii M A Putyato N N Rubtsova |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | A reflection interferometer based on a thin metal film is proposed to measure the phase of the reflection spectrum of laser mirrors. The device is applied to the study of the phase characteristics of the all-semiconductor mirror which combines the functions of the saturable absorber and the dispersion compensator (all-in-one) in the Nd3+:KGd(WO4)2 laser operating in the ultrashort-pulse regime. The method provides improvement of spectral resolutions and an increase in the accuracy in the measurement of the phase characteristics. |
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