Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell |
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| Authors: | Fangqin Zeng Kaiwen Sun Li Gong Liangxing Jiang Fangyang Liu Yanqing Lai Jie Li |
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| Institution: | 1. School of Metallurgy and Environment, 410083, P.R. China;2. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, NSW 2052, Australia;3. School of Physics and Electronic Science, 410100, P.R. China |
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| Abstract: | Carbon layers have been employed as intermediate layers between Mo back contact and Cu2ZnSn(S1–xSex)4(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe2 and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | solar cells carbon layers Cu2ZnSn(S1− xSex)4 back contacts MoSe2 crystallinity absorbers thin films |
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