Heterojunction band discontinuities of quaternary semiconductor alloys |
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| Authors: | M Nakao S Yoshida S Gonda |
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| Institution: | Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan |
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| Abstract: | A simple sp3 hybrid-orbital model for predicting valence-band discontinuities is proposed and applied to quaternaries. The effects of anion and cation disorder are taken into account explicitly within the coherent-potential approximation. Results for In1?xGaxP1?yAsy, In1?xGaxAs1?ySby, Ga1?xAlxAs1?ySby and In1?xAlxP1?ySby lattice-matched to some binaries are shown. The broadening of valence-band-top levels due to alloy scattering is found negligible. |
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