Charge density wave depinning and switching in NbSe3

We have investigated the relation between charge density wave (CDW) depinning and switching in NbSe₃. In the lower CDW state we observe that the critical electric field at which switching occurs is independent of temperature. We also observe that the differential resistance of the sample is independent of applied dc bias beyond the switching threshold, and corresponds to the high-field limit of the pure resistance. We interpret our results in terms of a temperature dependent CDW domain structure in the crystal.