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Two-photon resonant photo-hall effect in n-InSb
Authors:C.L. Littler  D.G. Seiler  S.W. McClure
Affiliation:Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX 76203, U.S.A.
Abstract:Resonant two-photon structure is observed in the photo-Hall response of n-InSb at liquid helium temperatures. The number of two-phonon photo-excited carriers, directly determined from the photo-Hall effect, is seen to be proportional to the square of the incident laser intensity and to decay via a two-stage process. The low intensity and photo-excited carrier decay results are described using a three-level system involving the shallow donor impurity levels.
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