Far infrared optical properties of NbSe3 |
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| Authors: | W.A. Challener P.L. Richards |
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| Affiliation: | 1. Department of Physics, University of California, Berkeley, California 94720, U.S.A.;2. Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720, U.S.A. |
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| Abstract: | ![]()
We have measured the far infrared reflectance of NbSe3 and used models of the frequency dependent conductivity to fit the data. General arguments show that at 2 K a charge density wave (CDW) energy gap exists between 120 and 190 cm?1, the relaxation time(s) of the free carriers and CDW pinned mode is >30×10?12 s, and the ratio of the free carrier concentration to band mass is <2×1020 cm?3/m0. |
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