Dielectric constant and threshold electric field of charge-density-waves with strong impurity pinning

The dielectric constant ε and the threshold electric field E_T for the onset of charge-density-wave conduction are investigated within the phenomenological model proposed by Tua and Zawadowski for the strong pinning regime. The static dielectric constant ε (E) in a bias electric field E is found to be almost independent of E provided that E is not too close to E_T. For relatively small values of the pinning strength, the product ε E_T becomes independent of the parameters of the theory. Good agreement is found with the available experimental data on NbSe₃ for the case of strong pinning obtained by radiation damage.