The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance |
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Authors: | Xuan Kai Yan Xiao-Hong Ding Shu-Long Yang Yu-Rong Xiao Yang and Guo Zhao-Hui |
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Institution: | Department of Physics & Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China; College of Sciences, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China |
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Abstract: | ZnO micro-prisms are prepared on the p-type and n-type Si substrates,
separately. The $I$--$V$ curves analysed by AFM show that the interface junctions
between the ZnO micro-prisms and the p-type substrate and between the ZnO
micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and
ohmic contact behaviour, respectively. The formation of the p--n
heterojunction and ohmic contact is ascribed to the intrinsic n-type
conduction of ZnO material. Better field emission performance (lower onset
voltage and larger emission current) is observed from an individual ZnO
micro-prism grown on the n-type Si substrate. It is suggested that the
n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while
the p-Si/n-ZnO interface heterojunction deteriorates the electron emission. |
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Keywords: | field emission interface junction p-n junction ohmic contact |
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