Radiation response of strained Si---SiO2 layered system

In the presented paper radiation effects in silicon-silicon dioxide systems in the presence of additional tensile and compressive stresses were investigated. These stresses were produced by placing additional layers of SiO₂ or Si₃N₄ on the back side of oxidized silicon wafers.The results obtained indicate that relaxation takes place in the oxide during irradiation and leads to the decrease of the compressive stress in the oxide film. Relaxation of strained bonds causes defect generation and the increase of the oxide charge density. This increase is larger for oxides with higher level of compressive stress. No significant changes of the density of surface states were observed since the additional coatings did not affect the strain gradient in the SiO₂.