Electronic transport properties of bismuth nanobridges through silicon-nitride membranes |
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| Authors: | F Prez-Willard C Sürgers H Von Lhneysen P Pfundstein |
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| Institution: | a Physikalisches Institut, Universität Karlsruhe, Wolfgang-Gaede-Str.1, D-76128, Karlsruhe, Germany;b Forschungszentrum Karlsruhe, Institut für Festkörperphysik, D-76021, Karlsruhe, Germany;c Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128, Karlsruhe, Germany |
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| Abstract: | The electronic transport through nanostructured bismuth nanobridges has been investigated at low temperatures (T<2 K) and in magnetic fields B up to 8.5 T. The samples show reproducible resistance fluctuations as a function of B, superimposed on a large magnetoresistance of up to 50%. In addition, time-dependent resistance fluctuations in zero magnetic field demonstrate the presence of bistable scatterers in the constriction region of our samples, which are described by two-level systems. Their dynamics are shown to be sensitive to subtle modifications of the static scatterer configuration in their vicinity, which cannot be detected in the sample magnetofingerprint. |
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| Keywords: | Nanostructured point contacts Point contact spectroscopy Magnetoresistance Conductance fluctuations Two-level systems |
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