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Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition |
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| Authors: | Li Liang Yang Lin-An Xue Jun-Shuai Cao Rong-Tao Xu Sheng-Rui Zhang Jin-Cheng Hao Yue |
| Affiliation: | State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
| Abstract: | In0.17Al0.83N interlayer, GaN crystal quality, dislocation reduction, photoluminescence, Raman spectra |
| Keywords: | In0.17Al0.83N interlayer GaN crystal quality dislocation reduction photoluminescence Raman spectra |
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