Influence of temperature on strain-induced polarization Coulomb field scattering in AIN/GaN heterostructure field-effect transistors |
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| Authors: | Lu Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Guo Hong-Yu, Gu Guo-Dong, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Song Xu-Bo, Cai Shu-Jun |
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| Affiliation: | [1]National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China; [2]School of Physics, Shandong University, Jinan 250100, China |
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| Abstract: | AlN/GaN, electron mobility, polarization Coulomb field scattering, polarization |
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| Keywords: | AlN/GaN electron mobility polarization Coulomb field scattering polarization |
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