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Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer |
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| Affiliation: | Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| Abstract: | light-emitting diode, InGaN/AIlnGaN superlattice, efficiency droop |
| Keywords: | light-emitting diode InGaN/AIlnGaN superlattice efficiency droop |
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