Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

Authors:	F. Gao D. D. Huang J. P. Li Y. X. Lin M. Y. Kong D. Z. Sun J. M. Li L. Y. Lin

Affiliation:	Materials Science Center, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, People's Republic of China

Abstract:	As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH₃) flow rate in gas source Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH₃ can affect Si growth rate? Up to now, the quantitative characterization of PH₃ flow influence on Si growth rate is little known. In this letter, the PH₃ influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect.

Keywords:	Si growth rate P doping PH₃ flow rate P segregation GSMBE
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