Dynamics of copper atoms on Si(1 1 1)-7 × 7 surfaces |
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Authors: | Mon-Shu Ho I-Wu Wang Chih-Chuan Su |
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Institution: | Department of Physics, Center of Nanoscience and Nanotechnology, National Chung Hsing University, 250 Kuo-Kuang Road, Taichung 402, Taiwan |
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Abstract: | This study investigated the dynamics of copper atoms adsorbed on Si(1 1 1)-7 × 7 surfaces between 300 K and 623 K using a variable-temperature scanning tunneling microscope (STM). The diffusion behavior of copper clusters containing up to ∼6 atoms into a particular half unit cell of the 7 × 7 reconstructed Si(1 1 1) surface was considered. The movements and the formation of copper clusters were tracked in detail. The activation energies and pre-exponential factors for various diffusion paths were estimated. Finally, the Cu-etching-Si process and the quasi-5 × 5 incommensurated phase of Cu/Si islands were discussed. |
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Keywords: | Scanning tunneling microscope (STM) Dynamics Copper Silicon |
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