Ultrafast carrier dynamics in ferromagnetic InGaMnAs |
| |
| Authors: | J Wang J Kono A Oiwa H Munekata C J Stanton |
| |
| Institution: | a Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA;b Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan;c Department of Physics, University of Florida, Gainesville, FL 32611, USA |
| |
| Abstract: | We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons. |
| |
| Keywords: | III– V ferromagnetic semiconductors Ultrafast carrier dynamics |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
