AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究

在不同应力条件下，研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明，AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后，器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析，发现器件经过高温退火后，Ni和AlGaN层之间介质的去除，并且AlGaN材料表面附近的陷阱减少，使得肖特基有效势垒提高，从而提高器件的电学特性. 关键词： AlGaN/GaN高电子迁移率晶体管 肖特基接触 界面陷阱

Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing

Under different stress, the current collapse, gate current leakage and breakdown voltages of AlGaN/GaN high electron mobility transistors change before and after high temperature annealing. The results show that characteristics of devices are greatly improved for AlGaN/GaN high electron mobility transistor after Schottky high temperature annealing. Interface of Schottky contacts is studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) before and after high temperature annealing. The analysis indicates that eliminating the medium between Ni and AlGaN and reducing of traps near the surface of AlGaN can improve the effective Schottky barrier, which can enhance the electric characteristics of the devices.