Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented,uniform, insulative films |
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Authors: | M Alizadeh H Mehdipour V Ganesh A N Ameera B T Goh A Shuhaimi S A Rahman |
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Institution: | 1. Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603, Kuala Lumpur, Malaysia 2. Plasma Nanoscience @ Complex Systems, The University of Sydney, Sydney, NSW, 2006, Australia 3. Physics Department, Faculty of Science, Sahand University of Technology, 51335-1996, Tabriz, Iran
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Abstract: | c-Axis-oriented aluminum nitride (AlN) thin film with improved quality was deposited on Si(111) substrate using ZnO buffer layer by plasma-assisted hot filament chemical vapor deposition. The optical and electrical properties and surface morphology as well as elemental composition of the AlN films deposited with and without ZnO buffer layer were investigated using a host of measurement techniques: X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and current–voltage (I–V) characteristic measurement. The XRD and XPS results reveal that the AlN/ZnO/Si films are free of metallic Al particles. Also, cross-sectional FESEM observations suggest formation of a well-aligned, uniform, continuous, and highly (002) oriented structure for a bi-layered AlN film when Si(111) is covered with ZnO buffer. Moreover, a decrease in full width at half maximum of the E2 (high)-mode peak in Raman spectrum indicates a better crystallinity for the AlN films formed on ZnO/Si substrate. Finally, I–V curves obtained indicate that the electrical behavior of the AlN thin films switches from conductive to insulative when film is grown on a ZnO-buffered Si substrate. |
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