| Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes’ structures and electric properties |
| |
| 引用本文： | 南雅公,蒲红斌,曹琳,任杰. Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes’ structures and electric properties[J]. 中国物理 B, 2010, 19(10): 107304-107304 |
| |
| 作者姓名： | 南雅公 蒲红斌 曹琳 任杰 |
| |
| 作者单位： | [1]Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi＇an University of Technology, Xi＇an 710048, China [2]Department of Physics and Electronics, Hexi University, Zhangye 734000, Oansu Province, China |
| |
| 基金项目： | Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China. |
| |
| 摘 要： | This paper stuides the structures of 4H-SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.
|
| 关 键 词： | 4H–SiC floating junction Schottky barrier diode optimization |
| 收稿时间： | 2009-07-16 |
| 修稿时间： | 2010-04-05 |
Study and optimal simulation of 4H--SiC floating junction Schottky barrier diodes' structures and electric properties |
| |
| Nan Ya-Gong,Pu Hong-Bin,Cao Lin and Ren Jie. Study and optimal simulation of 4H--SiC floating junction Schottky barrier diodes' structures and electric properties[J]. Chinese Physics B, 2010, 19(10): 107304-107304 |
| |
| Authors: | Nan Ya-Gong Pu Hong-Bin Cao Lin Ren Jie |
| |
| Affiliation: | Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; Department of Physics and Electronics, Hexi University, Zhangye 734000, Gansu Province, China;Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China |
| |
| Abstract: | This paper stuides the structures of 4H--SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved. |
| |
| Keywords: | 4H--SiC floating junction Schottky barrier diode optimization |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
