Interface magnetization reversal and anisotropy in Fe/AlGaAs(001) |
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Authors: | Zhao H B Talbayev D Lüpke G Hanbicki A T Li C H van't Erve M J Kioseoglou G Jonker B T |
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Institution: | Department of Applied Science, College of William & Mary, Williamsburg, Virginia, 23185, USA. |
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Abstract: | The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures. |
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