| Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜 |
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| 引用本文： | 苏少坚,汪巍,张广泽,胡炜玄,白安琪,薛春来,左玉华,成步文,王启明.Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜[J].物理学报,2011,60(2):28101-028101. |
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| 作者姓名： | 苏少坚 汪巍 张广泽 胡炜玄 白安琪 薛春来 左玉华 成步文 王启明 |
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| 作者单位： | 中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083 |
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| 基金项目： | 国家重点基础研究发展计划 (批准号:2007CB613404)、国家自然科学基金(批准号:61036003,60906035,51072194)和中国科学院知识创新工程青年人才领域前沿项目(批准号:ISCAS2009T01)资助的课题. |
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| 摘 要： | 使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si(001)衬底上采用分子束外延法生长出Ge0.975Sn0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge0.975Sn0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge0.975Sn0.025合金薄膜在500 ℃下具有很好的热稳定性,有望在Si基光电器件中得到应用.
关键词：
GeSn
Ge
分子束外延
外延生长
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| 关 键 词： | GeSn Ge 分子束外延 外延生长 |
| 收稿时间： | 9/8/2010 12:00:00 AM |
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy |
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| Su Shao-Jian,Wang Wei,Zhang Guang-Ze,Hu Wei-Xuan,Bai An-Qi,Xue Chun-Lai,Zuo Yu-Hua,Cheng Bu-Wen,Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy[J].Acta Physica Sinica,2011,60(2):28101-028101. |
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| Authors: | Su Shao-Jian Wang Wei Zhang Guang-Ze Hu Wei-Xuan Bai An-Qi Xue Chun-Lai Zuo Yu-Hua Cheng Bu-Wen Wang Qi-Ming |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Ge0.975Sn0.025 alloy films have been grown on Si(001) substrates by molecular beam epitaxy with high-quality Ge films as buffer layers.The alloys have high crystalline quality without Sn surface segregation, determined by double crystal X-ray diffraction and Rutherford backscattering spectra measurement. In addition, the Ge0.975Sn0.025 alloy has rather good thermal stability at 500 ℃, which makes it possible to be used in Si-based optoelectronic devices. |
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| Keywords: | GeSn Ge molecular beam epitaxy epitaxial growth |
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