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注入电流对绿光高压LED光电特性的影响
引用本文:白俊雪,郭伟玲,俞 鑫,樊 星,刘建鹏,韩 禹.注入电流对绿光高压LED光电特性的影响[J].发光学报,2014,35(1):101-104.
作者姓名:白俊雪  郭伟玲  俞 鑫  樊 星  刘建鹏  韩 禹
作者单位:北京工业大学 光电子技术省部共建教育部重点实验室, 北京 100124
基金项目:国家科技支撑计划 (2011BAE01B14);国家自然科学基金(61107026);北京市教委基金(KM201210005004)资助项目
摘    要:设计并制备了12 V 的GaN基绿光高压发光二极管(LED),并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明:电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。

关 键 词:GaN基高压LED  注入电流  正向电压  峰值波长  发光效率
收稿时间:2013-09-14

Effects of Injection Current on Optical and Electrical Properties of GaN-based Green High Voltage LED
BAI Jun-xue,GUO Wei-ling,YU Xin,FAN Xing,LIU Jian-peng,HAN Yu.Effects of Injection Current on Optical and Electrical Properties of GaN-based Green High Voltage LED[J].Chinese Journal of Luminescence,2014,35(1):101-104.
Authors:BAI Jun-xue  GUO Wei-ling  YU Xin  FAN Xing  LIU Jian-peng  HAN Yu
Institution:Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
Abstract:GaN-based green high-voltage (HV) light emitting diodes (LEDs) of 12 V were designed and fabricated. The optical and electrical parameters such as forward voltage, peak of wavelength, optical power, and luminous efficiency were investigated when the injection current varied from 3 mA to 50 mA at 25 ℃. The results show that the injection current has a great effect on the optical and electrical properties of the GaN-based high-voltage LED. When the current is 20 mA, the corresponding voltage is 14 V. With the increasing of the injection current, the blue-shift of LED peak wavelength reaches 2 nm. In addition, the optical power increases approximately linearly with the current increasing. The luminous efficiency decreases 61% when the injection current increases from 3 mA to 20 mA, and decreases 39% when the injection current increases from 20 mA to 50 mA. It indicates that the luminous efficiency decreases more slowly when the high-voltage LED is driven by large current. These results will have a certain reference value for the improvement and optimization of GaN-based high-voltage LEDs.
Keywords:GaN-based high-voltage light emitting diode  injection current  forward voltage  peak wavelength  luminous efficiency
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