| 磺化酞菁铜分子膜／SiO2／Si界面电荷转移机制的研究 |
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| 引用本文： | 江雷,韩力.磺化酞菁铜分子膜／SiO2／Si界面电荷转移机制的研究[J].高等学校化学学报,1992,13(8):1098-1101. |
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| 作者姓名： | 江雷 韩力 |
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| 作者单位： | 吉林大学化学系，吉林大学化学系，吉林大学化学系，吉林大学化学系，吉林大学化学系，吉林大学物理系，吉林大学物理系 长春130023，长春130023，长春130023，长春130023，长春130023 |
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| 摘 要： | 在具有不同氧化层厚度的p型硅基片上修饰2层磺化酞菁铜分子膜.利用时间分辨表面光电压谱技术,对该膜系的界面电荷转移机制的光电开关特性进行了研究。结果表明,用时间分辨表面光电压谱技术研究界面电荷转移过程具有明显优越性.
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| 关 键 词： | 光电压 电荷转移 磺化酞菁铜 LB膜 |
A Study of CuTsPc Molecular Film/SiO2/Si Interfacial Charge Transfer Mechanism |
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| JIANG Lei,Liu Wang,Wang De-Jun,Li Tie-Jin,Bai Yu-Bai.A Study of CuTsPc Molecular Film/SiO2/Si Interfacial Charge Transfer Mechanism[J].Chemical Research In Chinese Universities,1992,13(8):1098-1101. |
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| Authors: | JIANG Lei Liu Wang Wang De-Jun Li Tie-Jin Bai Yu-Bai |
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| Abstract: | In this paper,two layers of lipid-free copper tetrasulfonatophthalocyanine(CuTsPc) molecular films were deposited on the surface of p-Si wafers on which the oxided layers with different thickness.Time resolved surface photovoltage technique was used to study the mechanism of the electron transfer process of this system.The samples show the behavior of photo-electronic switch.The results prove that time resolved photovoltage technique is very useful to the study of the interfacial charge transfer process. |
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| Keywords: | Photovoltage Charge transfer Photo-electronic switch |
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