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CuNi binary alloy catalyst for growth of nitrogen‐doped graphene by low pressure chemical vapor deposition |
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| Authors: | Remi Papon Kamal P Sharma Rakesh D Mahayavanshi Subash Sharma Riteshkumar Vishwakarma Mohamad Saufi Rosmi Toshio Kawahara Joseph Cline Golap Kalita Masaki Tanemura |
| Institution: | 1. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso‐cho, Nagoya, Japan;2. Department of Electronics and Information Engineering, Chubu University, Kasugai, Japan;3. Department of Materials Science and Engineering, P.C. Rossin College of Engineering and Applied Science, Lehigh University, Bethlehem, Pennsylvania, USA;4. +81 52 735 5216+81 52 735 5216 |
| Abstract: | The CuNi binary alloy can be significant as a catalyst for nitrogen‐doped (N‐doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N‐doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few‐layer graphene domains. X‐ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N‐doped bilayer graphene domains can be synthesized on the CuNi binary alloy.  |
| Keywords: | binary alloys doping twisted bilayers chemical vapor deposition graphene |