| ICP等离子体鞘层附近区域发光光谱特性分析 |
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| 引用本文： | 赵文锋,陈俊芳,孟然.ICP等离子体鞘层附近区域发光光谱特性分析[J].光谱学与光谱分析,2009,29(11):3134-3137. |
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| 作者姓名： | 赵文锋 陈俊芳 孟然 |
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| 作者单位： | 1. 华南师范大学广东省高等学校物理与电信工程学院,量子信息技术重点实验室,广东,广州,510006;华南农业大学工程学院,广东,广州,510642
2. 华南师范大学广东省高等学校物理与电信工程学院,量子信息技术重点实验室,广东,广州,510006 |
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| 基金项目： | 国家自然科学基金项目，高等学校博士学科点专项科研基金项目 |
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| 摘 要： | 为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.
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| 关 键 词： | 发射光谱 感应耦合等离子体 等离子体鞘层附近区域 |
| 收稿时间： | 2008/11/8 |
Analysis of Optical Emission Spectra from ICP of Ar in the Vicinity of Plasma Sheath |
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| ZHAO Wen-feng,CHEN Jun-fang,MENG Ran. School of Physics , Telecommunications Engineering,Laboratory of Quantum Information Technology,South China Normal University,Guangzhou ,China. College of Engineering,South China Agricultural University,Guangzhou ,China.Analysis of Optical Emission Spectra from ICP of Ar in the Vicinity of Plasma Sheath[J].Spectroscopy and Spectral Analysis,2009,29(11):3134-3137. |
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| Authors: | ZHAO Wen-feng CHEN Jun-fang MENG Ran School of Physics Telecommunications Engineering Laboratory of Quantum Information Technology South China Normal University Guangzhou China College of Engineering South China Agricultural University Guangzhou China |
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| Institution: | ZHAO Wen-feng1,2,CHEN Jun-fang1,MENG Ran11. School of Physics and Telecommunications Engineering,Laboratory of Quantum Information Technology,South China Normal University,Guangzhou 510006,China2. College of Engineering,South China Agricultural University,Guangzhou 510642,China |
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| Abstract: | In order to control the ion density and energy distribution in the vicinity of plasma sheath independently,the inductively coupled plasma and its glow discharge mechanism in the vicinity of plasma sheath were studied by means of optical emission spectroscopy (OES) under different RF power,different discharge and different substrate DC bias voltage. It was shown that the ion density is higher and the electron temperature is lower in the vicinity of inductively coupled plasma sheath according to the ionic lin... |
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| Keywords: | Optical emission spectrum ICP plasma Vicinity of plasma sheath |
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