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Blue InGaN light-emitting diodes with dip-shaped quantum wells
Authors:Lu Tai-Ping  Li Shu-Ti  Zhang Kang  Liu Chao  Xiao Guo-Wei  Zhou Yu-Gang  Zheng Shu-Wen  Yin Yi-An  Wu Le-Juan  Wang Hai-Long  Yang Xiao-Dong
Affiliation:Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; APT Electronics Ltd, Nansha District, Guangzhou 511458, China
Abstract:
InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).
Keywords:GaN-based light-emitting diodes  dip-shaped quantum wells
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