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Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0) |
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| Authors: | L. Casta eda, A. Maldonado, J.C. Cheang-Wong, M. Terrones,M. de la L. Olvera |
| Affiliation: | aCentro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apartado Postal 70-186, 04510 D. F., México bDepartamento de Física y Matemáticas, División de Ciencia, Arte y Tecnología, Universidad Iberoamericana, Av. Prolongación Paseo de la Reforma 880, Santa Fé 012100, D. F., México cDepto. de Ing. Eléctrica, CINVESTAV IPN, SEES, Apartado Postal 14740, México, D.F. 07000, México dInstituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, México, D.F. 01000, México eAdvanced Materials Department, IPICYT, Camino a la Presa San José 2055, Col. Lomas, 4a. sección, San Luis Potosí, 78216, México |
| Abstract: | Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature. |
| Keywords: | ZnO RBS Thin films Semiconductor oxides Chemical spray |
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