Polymorphism of Ba2SiP4 |
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Authors: | Arthur Haffner Valentin Weippert Dirk Johrendt |
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Institution: | Department of Chemistry, Ludwig-Maximilians-University of Munich, Butenandtstrasse 5–13, (D) 81377 Munich, Germany |
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Abstract: | The three-dimensional SiP4 network in the known phosphidosilicate Ba2SiP4-tI28 is analogous to β-Cristobalite if oxygen is formally replaced by P–P dimers. Here we report a second polymorph Ba2SiP4-oP56 Pnma, a = 12.3710(4) Å, b = 14.6296(7) Å, c = 7.9783(3) Å; Z = 8] with chains of SiP4 tetrahedra connected by P–P bonds, reminiscent to the elusive fibrous SiO2. Ba2SiP4 is enantiotropic. The high temperature polymorph Ba2SiP4-oP56 transforms to the low-temperature phase Ba2SiP4-tI28 at 650 °C and reconstructs to the high-temperature modification at 1100 °C. DFT calculations predict an indirect optical bandgap of about 1.7 eV. |
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Keywords: | Phosphidosilicates Enantiotropic phase transition Pseudo edges Barium Semiconductors |
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