| Abstract: | Cumulative nanosecond pulsed excimer laser irradiation of silicon produces an array of high-aspect-ratio microcolumns that protrude well above the initial surface. The growth of these microcolumns is strongly affected by the gas environment, being enhanced in air or in other oxygen-containing atmosphere. An array of very large and complex conical structures that also protrude above the surface is formed if the irradiation is performed in sulfur hexafluoride (SF6). Kinetics studies of microcolumn growth show that: (i) A certain number of pulses is required to initiate growth of microcolumns; (ii) column nucleation is inhomogeneous, taking place always at the edges of deep grooves or pits; (iii) growth is fast with the earlier pulses but slows down to a halt when the columns reach a certain length. These studies show that columns nucleate and grow by continuous influx of silicon with each laser pulse. It is proposed that the axial growth of microcolumns and cones is due to the deposition of atoms or clusters at their tips. The column/cone tips are melted during irradiation and act as preferred sites for deposition, resulting in a very high axial growth rate. The contribution of etching and ablation to the flux of silicon-rich vapor produced during irradiation is discussed. The mechanism of columnar growth is compared with the vapor-liquid-solid method to grow silicon whiskers. |
