用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应

The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture

We have studied the stability of amorphous silicon and polycrystalline silicon films under illumination. These films are prepared by plasma-enhanced chemical vapor deposition technology from SiH₄/H₂ and SiCl_{4/H2 separately. The exp eriment indicates that the light-soaking degradation phenomenon, which exists in almost all amorphous silicon films, does not appear in the polycrystalline sili con films. The light-dark conductivity of polycrystalline silicon films does not decrease but increase during light irradiation. Furthermore, the variance of co nductivity depends on hydrogen dilution ratio. It is suggested that the persiste nt photoconductivity effect of polycrystalline silicon films may originate from the high crystallinity and the action of chlorine.}