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Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
Authors:José P.B. Silva  Koppole C. Sekhar  Sofia A.S. Rodrigues  Anatoli Khodorov  Javier Martín-Sanchez  Mário Pereira  Maria J.M. Gomes
Affiliation:Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Abstract:
The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30–40 nm. A well saturated P–E hysteresis loop was observed with a remnant polarization (Pr)  4.8 μC/cm2 and a coercive field  100 kV/cm at a frequency of 1 kHz. The Pr has been found to be decreased only 4.3% after passing 8.0 × 108 cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t0) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t0 exhibits exponential dependence on reciprocal of pulse amplitude.
Keywords:
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