Electron emission characteristics of Al-AlN granular films |
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| Authors: | HF Liang CL Liu LG Meng |
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| Institution: | a Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an, 710049, China
b Key Laboratory of Optical Measurement and Thin Film of Shannxi Province, Xi’an Technological University, Xi’an, 710032, China |
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| Abstract: | An electron conduction emitter of Al-AlN granular films was proposed for surface conduction electron emission device in this paper. The Al-AlN granular films with thickness of 30 nm were prepared between two co-planar electrodes with gap of 10 μm by magnetron sputtering. After electroforming the Al-AlN granular films, the films’ structure could be recovered by applying the periodic device voltage (Vf). Stable and uniform electron emission was observed with turn-on voltage of 5.3 V and threshold voltage of 9 V. The emitter emission current (Ie) of 4.84 μA for 36 cells was obtained with the anode voltage of 2.5 kV and the device voltage of 12 V. In addition, Fowler-Nordheim plots for Ie-Vf properties showed that the electron emission mechanism should be field emission. |
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| Keywords: | 85 45 Db 85 45 Bz |
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