Structural and optical characterization of Ce-doped Gd2SiO5 films by sol-gel technique |
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Authors: | Yinzhen Wang Benli Chu Jun Xu |
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Institution: | a School of Physics & Telecommunication Engineering, South China Normal University, Guangzhou, 510631, PR China b Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, PR China |
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Abstract: | Cerium-doped Gd2SiO5 (GSO:Ce) films have been prepared on (1 1 1) silicon substrates by the sol-gel technique. Annealing was performed in the temperature range from 400 to 1000 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the structure and morphology of GSO:Ce films. Results showed that GSO:Ce film starts to crystallize at about 600 °C, GSO:Ce films have a preferential (0 2 1) orientation, as the annealing temperature increase, the (0 2 1) peak intensity increases, the full width of half maximum (FWHM) decreases, and the grain size of GSO:Ce films increases. Emission spectra of GSO:Ce films were measured, results exhibit the characteristic blue emission peak at 427 nm. |
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Keywords: | 81 15 Cd 68 55 &minus a 78 2 &minus e |
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