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Epitaxial growth and characterization of CaVO3 thin films |
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| Authors: | M. Liberati R.V. Chopdekar V. Mehta E. Arenholz |
| Affiliation: | a Department of Materials Science and Engineering, UC Berkeley, Berkeley, CA, USA b Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA c School of Applied Physics, Cornell University, Ithaca, NY, USA d Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA |
| Abstract: | Epitaxial thin films of CaVO3 were synthesized on SrTiO3, LaAlO3 and (La0.27Sr0.73)(Al0.65Ta0.35)O3 substrates by pulsed laser deposition. All CaVO3 films, independent of epitaxial strain, exhibit metallic and Pauli paramagnetic behavior as CaVO3 single crystals. X-ray absorption measurements confirmed the 4+ valence state for Vanadium ions. With prolonged air exposure, an increasing amount of V3+ is detected and is attributed to oxygen loss in the near surface region of the films. |
| Keywords: | 73.61.At 75.70.Ak 78.70.Dm 81.15.Fg |
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