Final states in Si and GaAs via RF μSR spectroscopy |
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Authors: | S R Kreitzman T Pfiz S Sun-Mack T M Riseman J H Brewer D Ll Williams T L Estle |
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Institution: | (1) TRIUMF and Dept. of Physics, Univ. of British Columbia, 4004 Wesbrook Mall, V6T 2A3 Vancouver, B.C., Canada;(2) Dept. of Physics, Simon Fraser Univ., V5A 1S6 Burnaby, B.C., Canada;(3) Dept. of Physics, Rice Univ., P.O.B. 1892, 77251 Houston, TX, USA |
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Abstract: | The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all
three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ
f
+
) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization
of Mu* and Mu. We observe a full μ
f
+
fraction at 317 K when the Mu relaxation rate is above 10 μs−1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K
respectively. |
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Keywords: | |
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