Hydrogen adsorption on silicon (1 1 1) surfaces studied by Auger electron spectroscopy |
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| Authors: | A. Thanailakis D.E. Ioannou C.M. Reed |
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| Affiliation: | Department of Electrical Engineering, Democritus University of Thrace, Xanthi, Greece |
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| Abstract: | The adsorption of atomic hydrogen on the (1 1 1) planes of silicon single crystals is studied by Auger Electron Analysis, using the decrease of the silicon Auger peak heigh as a measure of the hydrogen coverage. The zero coverage sticking coefficient is found to be 3 × 10?4. |
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