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High resolution FTIR measurements of LVM-structure in GaAs |
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| Authors: | Gareth A. Gledhill Ronald C. Newman John D. Collins |
| Affiliation: | (1) Department of Physics, Royal Holloway and Bedford New College, University of London, Egham Hill, TW20 OEX Egham, Surrey, UK;(2) J. J. Thomson Physical Laboratory, University of Reading, Whiteknights, P.O. Box 110, RG6 2AF Reading, Berks, UK |
| Abstract: | High resolution measurements of LVMs (localised vibrational modes) can give vital information about the configuration of defects within a crystal lattice. Illustrations of this technique for the centres BAs, B(1) and SiGa-GeAs in GaAs are presented. |
| Keywords: | GaAs localised vibrational modes (LVMs) infrared spectroscopy defects |
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