Long Si nanowires with millimeter-scale length by modified thermal evaporation from Si powder |
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Authors: | Y Shi Q Hu H Araki H Suzuki H Gao W Yang T Noda |
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Institution: | (1) National Institute for Materials Sciences, 1-2-1, Sengen, Tsukuba-shi, 305-0047 Ibaraki, Japan |
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Abstract: | A modified thermal evaporation processing is reported to fabricate silicon nanowires starting from Si powder under normal pressure. In a temperature range of 1250–1290 °C, long single-crystal Si nanowires with an amorphous layer were grown in relative large quantity, and they had a millimeter-scale length and a uniform diameter of about 100 nm. A high-resolution transmission electron microscopy image indicated that the growing direction of the long Si nanowires is 111]. PACS 81.07.Bc |
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