| Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers |
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| 引用本文： | 邓小川,陈茜茜,李诚瞻,申华军,张金平.Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers[J].中国物理 B,2016,25(8):87201-087201. |
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| 作者姓名： | 邓小川 陈茜茜 李诚瞻 申华军 张金平 |
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| 作者单位： | 1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2.Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou 412001, China;3.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China |
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| 基金项目： | Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006), the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301), and the National Science and Technology Major Project of the Ministry of Science and Technology, China (Grant No. 2013ZX02305-003). |
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| 摘 要： | The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm~2 are obtained from the fabricated diode with a 30-μm thick N~- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.
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| 收稿时间： | 2016-01-21 |
Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers |
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| Institution: | 1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2.Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou 412001, China;3.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China |
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| Abstract: | The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study. Three geometrical parameters, i.e., mesa height, mesa angle and mesa bottom corner, are investigated by numerical simulation. The simulation results show that a deep mesa height, a small mesa angle and a smooth mesa bottom (without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution. Moreover, an optimized mesa structure without sub-trench (mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated. A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm2 are obtained from the fabricated diode with a 30-μm thick N- epi-layer, corresponding to 85% of the ideal parallel-plane value. The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. |
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| Keywords: | silicon carbide mesa configuration PiN rectifier breakdown voltage |
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