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First-principles calculations of structural and electronic properties of Tl_xGa_(1-x)As alloys
Authors:G Bilge&#  Aky&#  z  A Y Tunali  S E Gulebaglan  N B Yurdasan
Institution:1. Adnan Menderes University, Faculty of Arts and Sciences, Physics Department, 09100, Aydin, Turkey;2. Dokuz Eylul University, Faculty of Sciences, Physics Department, 35160 Izmir, Turkey;3. Yuzuncu Yil University, Department of Electric Program, Vacational School of Van, 65080 Van, Turkey
Abstract:The zincblende ternary alloys TlxGa1-xAs (0<x<1) are studied by numerical analysis based on the plane wave pseudopotential method within the density functional theory and the local density approximation. To model the alloys, 16-atom supercells with the 2× 2× 2 dimensions are used and the dependency of the lattice parameter, bulk modulus, electronic structure, energy band gap, and optical bowing on the concentration x are analyzed. The results indicate that the ternary TlxGa1-xAs alloys have an average band gap bowing parameter of 4.48 eV for semiconductor alloys and 2.412 eV for semimetals. It is found that the band gap bowing strongly depends on composition and alloying a small Tl content with GaAs produces important modifications in the band structures of the alloys.
Keywords:methods of electronic structure calculations  electron density of states and band structure of crystalline solids  electronic structure of disordered solid  
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