Fabrication of Al/AlO_x/Al junctions using pre-exposure technique at 30-keV e-beam voltage |
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Institution: | 1.National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;2.Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China |
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Abstract: | We fabricate high-quality A1/A1O_x/A1 junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage,in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique.The dose window is 5 times as large as that used in the usual Dolan bridge technique,making this technique much more robust.Similar results,comparable with those achieved using a 100-keV e-beam writer,are obtained,which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication. |
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Keywords: | Josephson junction pre-exposure 30-keV E-beam voltage superconducting qubit |
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