High-power 2.8 W blue-violet laser diode for white light sources |
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| Authors: | Rei Hashimoto Hung Hung Jongil Hwang Shinji Saito Shinya Nunoue |
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| Institution: | 1. Corporate Research & Development Center, Toshiba Corporation, Kawasaki, 212-8582, Japan
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| Abstract: | High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current. |
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