Phase transition characteristics of Ge–Sb–Te pseudobinary alloys in laser irradiation measurement |
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| Authors: | Tae Jin Park Sung Jin Park Dae Hyun Kim In Soo Kim Soo Kyung Kim Se Young Choi |
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| Institution: | aDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA;bDepartment of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong Sudaemoon-ku, Seoul 120749, Republic of Korea;cNANOStorage Co. Ltd., Seoul 120749, Republic of Korea |
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| Abstract: | Optical switching and structural transformation of GeTe–Sb2Te3 pseudobinary alloys, Ge2Sb2Te5, Ge1Sb2Te4, and Ge1Sb4Te7, were studied for data storage application. As-deposited Ge2Sb2Te5, Ge1Sb2Te4, and Ge1Sb4Te7 thin films were amorphous and they crystallized to FCC and HCP upon heat treatment. Crystallization was accelerated by increasing the proportion of Sb2Te3 rather than GeTe in Ge–Sb–Te compounds; this was observed by reflectivity changes under nanosecond laser irradiation in static tester. The different crystallization kinetics according to composition might be affected by the structural incompatibility of GeTe under the ‘Umbrella Flip’ theory. |
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| Keywords: | Phase transition Chalcogenide Phase change memory Optical property |
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