Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy |
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| Authors: | K N Boldyrev N Yu Boldyrev R V Kirillin |
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| Institution: | 1. Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow oblast, 142190, Russia
2. OOO Gruppa NITOL, Moscow, 111250, Russia
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| Abstract: | An experimental installation for analyzing electrically active impurities in high-purity silicon by investigating low-temperature transmission spectra withcompensation for donor-acceptor impurities is fabricated. The applicability of the method for studying both high-purity and doped silicon wafers is shown.Software for automatically computing the concentration of impurities is developed. |
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